A slot-die coating technique is used for the crystal alignment of triisopropylsilylethynyl (TIPS)-pentacene in solution-processed field-effect transistors (FETs). The film thickness, uniformity, and crystal growth behavior are well controlled by tuning the coating parameters and by using a mixed solvent system (toluene/anisole). An average saturation regime FET mobility of 1.8 cm(2) V(-1) s(-1) is achieved under ambient conditions.