MAIK Nauka/Interperiodica, Plasma Physics Reports, 13(37), p. 1242-1245
DOI: 10.1134/s1063780x11120014
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The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current flowing through the anodized specimen did not exceed 1.5 mA/cm2, and its temperature was 200–250°C. Continuous Al2O3 and SiO2 films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150–200 nm/h for Al2O3 and 400–800 nm/h for SiO2.