Elsevier, Journal of Crystal Growth, (214-215), p. 806-809
DOI: 10.1016/s0022-0248(00)00241-4
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The dynamic properties of hot excitons near the effective excitonic mobility edge are investigated in a CdSe/ZnSe superlattice structure where thermalized luminescence of localized excitons is strongly suppressed due to tunneling towards the attached deeper ZnCdSe quantum well. Time-resolved selective-excitation luminescence measurements reveal a rather complicated relaxation behavior involving fast (20–30 ps) acoustical–phonon-assisted selective occupation of states located close to the mobility edge.