Memory behavior in the ferroelectric liquid crystal (FLC) material, Felix 17/100, has been investigated by electro-optical, dielectric, and hysteresis methods at different temperatures ranging from room temperature to near ferro-paraelectric phase transition. Memory effect has been observed in the studied material near the transition temperature in Sm C ^* phase in the cells having thickness greater than the pitch value of the material. This is in contrast to the memory effect observed in conventional FLCs where thickness of the cell has to be less than the pitch value of the material. Electrical conductivity measurements elucidate that the steep increase in the conductivity near the transition temperature in Sm C ^* phase enhances the motion of free ions and probably weakens the depolarization field in the material, thereby showing memory effect.