A method for the bulk growth of mono- to few-layer graphene on nickel particles by chemical vapor deposition from methane at atmospheric pressure is described. A graphene yield of about 2.5% of the weight of nickel particles used was achieved in a growth time of 5 min. Scanning and transmission electron microscopy, Raman spectroscopy, thermogravimetry, and electrical conductivity measurements reveal the high quality of the graphene obtained. Suspended graphene can be prepared during this process, bridging the gaps between nearby nickel grains. After the growth of graphene the nickel particles can be effectively removed by a modest FeCl3/HCl etching treatment without degradation of the quality of the graphene sheets.