Published in

Elsevier, Microelectronics Reliability, 9-11(51), p. 1869-1873

DOI: 10.1016/j.microrel.2011.06.019

Links

Tools

Export citation

Search in Google Scholar

An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches

Journal article published in 2011 by J. Iannacci, A. Faes, A. Repchankova, Augusto Tazzoli, Gaudenzio Meneghesso ORCID
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Red circle
Postprint: archiving forbidden
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

We propose an active mechanism to retrieve the functionality of RF-MEMS ohmic switches after stiction occurs. The mechanism exploits a micro-heater, embedded within the switch topology, to induce restoring forces on the stuck membrane (thermal expansion) when a current is driven through it. Our experimental investigations prove that driving a pulsed rather than a DC current into the heater, enables a successful release of the tested RF-MEMS stuck devices. The release of stuck RF-MEMS ohmic switches is demonstrated for a cantilever-type micro relay. The mechanism is suitable for a large variety of switch topologies, and it can be embedded with small changes and effort within most of the already existing RF-MEMS ohmic switches, increasing their reliability.