Methodology for performing RF reliability experiments on a generic test structure

Sasse, Guido T.; de Vries, Rein J.; Schmitz, Jurriaan

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2007 IEEE International Conference on Microelectronic Test Structures

DOI: 10.1109/icmts.2007.374478

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Methodology for performing RF reliability experiments on a generic test structure

Proceedings article published in 2007 by Guido T. Sasse, Rein J. de Vries, Jurriaan Schmitz

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Abstract

This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz.

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Methodology for performing RF reliability experiments on a generic test structure

Abstract