The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cu-x(SiO2)(1-x) nanocomposite films around the percolation threshold x(C) in the temperature range of 4-300 K and frequencies of 20-10(6) Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold x(C) approximate to 0.59 and nearly metallic behaviour beyond the x(C). The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < x(C) exhibited behavior close to ReZ(f) approximate to f(-s) with s approximate to 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > x(C)), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.