We report here carrier's magneto-transport properties and the band structure results for II-IV semiconductors. HgTe is a zero gap semiconductor when it is sandwiched between CdTe layers to yield to a small gap HgTe/CdTe superlattice which is the key of an infrared detector. Our sample, grown by MBE, had a period d (100 layers) of 18 nm (HgTe) / 4.4 nm (CdTe). Calculations of the spectra of energy E(k z) and E(k p), respectively, in the direction of growth and in the plane of the superlattice were performed in the envelope function formalism. The angular dependence of the transverse magnetoresistance follows the two-dimensional (2D) behavior with Shubnikov-de Haas oscillations. At low temperature, the sample exhibits p type conductivity with a hole mobility of 900 cm²/V.s. A reversal the sign of the weak-field Hall coefficient occurs at 25 K with an electron mobility of 3 10 4 cm 2 /Vs. In intrinsic regime, the measured E g ≈ 38 meV agrees with calculated E g (Γ,300 K) = 34 meV which coincide with the Fermi level energy. The formalism used here predicts that this narrow gap sample is semi metallic, quasi-two-dimensional and far-infrared detector.