The growth of CdSe/BeTe type-II nanostructures grown by molecular beam epitaxy (MBE) on GaAs substrates was discussed. The nanostructure were found to demonstrate extremely high sensitivity to the interface bond type with the CdTe interfaces. The analysis showed that the formation of the first CdTe interface controlled by RHEED at the 0.1 ML level caused radical variation of the structure morphology at a similar CdSe nominal thickness in the 1.0-1.5 ML range.