American Institute of Physics, Applied Physics Letters, 10(97), p. 102104
DOI: 10.1063/1.3488829
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Based on the analysis of the photocurrent behavior of Pt sandwiched Pb(Zr0.2Ti0.8)O3 (PZT) films, the experimental evidence of top Pt/PZT interface layer thickness effect on the photocurrent is reported. It was well established before that the photocurrent of metal/ferroelectric film is attributed to the height of Schottky contact barrier. However, our results suggest that the photocurrent of Pt/PZT interface contact is determined not only by the barrier height but also by the interface layer thickness, namely, by the built-in electrical field at the interface layer. The mechanism behind such photocurrent phenomenon is proposed.