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Wiley, physica status solidi (b) – basic solid state physics, 1(251), p. 131-139

DOI: 10.1002/pssb.201349257

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Properties of the new electronic device material LaGdO3

Journal article published in 2013 by Ashok Kumar, Shojan P. Pavunny ORCID, James F. Scott, Pankaj Misra, Ram S. Katiyar
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The room temperature crystal structure of potential high-k dielectric LaGdO3 has been analyzed by X-ray diffraction techniques and its structural evolution with temperature has been probed by Raman spectroscopy. Rietveld refinement of the ambient XRD data established the perfectly layered B-type monoclinic crystal structure with a = 14.43 Å, b = 3.68 Å, c = 8.99 Å, and β = 100.57° which is further validated by the 21 (14 Ag and 7 Bg) Raman-active vibrational modes with centro-symmetric space group inline image or C2/m. Atomic positions, coordination numbers, inter-ionic lengths, etc. were derived using Rietveld analysis. All prominent Bragg peaks were successfully indexed. Temperature dependent Raman spectra of LaGdO3 from 80 to 1400 K were analyzed using the damped harmonic oscillator model. The softening and hardening of vibrational modes are reported. Above 900 K, disappearance of all high frequency modes (>600 cm−1) and merger of several mid frequency modes (between 200 and 500 cm−1) into two distinct modes was observed, a direct evidence of a possible structural phase transition from monoclinic to tetragonal/pseudocubic.