Published in

Wiley, physica status solidi (a) – applications and materials science, 2(204), p. 543-546, 2007

DOI: 10.1002/pssa.200673291

Links

Tools

Export citation

Search in Google Scholar

The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance

Journal article published in 2007 by R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey ORCID, James S. Harris, M. Motyka, M. Gladysiewicz, J. Misiewicz
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Orange circle
Postprint: archiving restricted
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

Contactless electroreflectance (CER) has been applied to study the influence of Sb atoms on the optical quality of highly strained GaInNAs/GaAs quantum wells (QWs). A set of QWs grown under various antimony fluxes has been analyzed in this work. The broadening of the CER resonance has been used as an indicator of the QW quality. It has been observed that broadening of the CER resonance related to the ground state transition decreases about three times (from ∼60 meV to 20 meV) after the incorporation of antimony into GaInNAs/GaAs QWs. Moreover, it has been observed that the broadening parameter does not decrease with the rise of antimony content from 0.5% to 2.0%. It means that only 0.5% Sb is enough to improve the optical quality of GaInNAs/GaAs QWs. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)