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American Chemical Society, Journal of Physical Chemistry C, 10(119), p. 5534-5541, 2015

DOI: 10.1021/acs.jpcc.5b00023

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Rutile Band-Gap States Induced by Doping with Manganese in Various Oxidation States

Journal article published in 2015 by Mazharul M. Islam, Thomas Bredow
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The effect of manganese doping on the electronic structure of titania in the rutile modification is investigated theoretically. The relative stability of the chemically accessible Mn oxidation states +I to +VII for MnTi defects is calculated in dependence of the spin state. For all MnTi oxidation states except +IV, additional lattice defects such as O and Ti vacancies were introduced to obtain charge neutrality. According to the calculated formation energies, Mn4+ is the most stable oxidation state for MnTi substitution in comparison with Mn3+ and Mn2+ doping. Depending on the Mn oxidation state, occupied and unoccupied states are created in the titania band gap.