Published in
American Institute of Physics, Applied Physics Letters, 10(107), p. 103506, 2015
DOI: 10.1063/1.4930876
Links
Tools
Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate
This paper is available in a repository.
Full text: Download
Data provided by 