Organic Transistors: Universal Magnetic Hall Circuit Based on Paired Spin Heterostructures (Adv. Electron. Mater. 6/2015)
Journal article published in 2015 by
Shilei Zhang,
Alexander A. Baker,
Jing‐Yan Zhang,
Guanghua Yu,
Shouguo Wang,
Thorsten Hesjedal 
This paper is made freely available by the publisher.
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Abstract
In article number 1400054, S.-L. Zhang and co-workers demonstrate a new combined memory and logic magnetic device, designed as an analog to a balance, which utilizes the anomalous Hall effect. Artificially quantizing the electric response of the thin ferromagnetic layers in the device, a number flexible spintronic devices can be realized, which form a universal circuit.