Ru-AlN thin films were suggested as a novel multifunctional heating resistor film for non-passivated type thermal inkjet printer devices. Ru-AlN thin films were prepared by plasma-enhanced atomic layer deposition in order to intermix Ru and AlN precisely. When the Ru intermixing ratios were optimized, Ru-AlN films showed a favorable electrical resistivity (from 490.9 to 75.3 mu Omega cm) and minimized temperature coefficient of resistance (TCR) values (from 335 to 360 ppm/K). Moreover, the Ru-AlN films showed a strong oxidation resistant as compared with commercially used TaN0.8 films because the prepared Ru-AlN thin films had a typical nanocomposite structure. By applying electrical pulses to the heater device using Ru-AlN thin films for a Joule heating, a reliable operation was also proven.