Dissemin is shutting down on January 1st, 2025

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MDPI, Materials, 9(7), p. 6843-6852, 2014

DOI: 10.3390/ma7096843

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A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Data provided by SHERPA/RoMEO

Abstract

A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 mu g/mL was achieved with a relatively low detection limit of 0.62 mu g/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing.