American Institute of Physics, Applied Physics Letters, 15(92), p. 153309
DOI: 10.1063/1.2912062
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Au/hexa-peri-hexabenzocoronene [C42H18/(HBC)]/GaAs heterostructures were investigated by ballistic electron emission microscopy. At room temperature, the Schottky barrier height at the Au/HBC interface was measured to be 1.3 eV, while the Fermi level at the HBC-GaAs interface is pinned 1.2 eV below the GaAs conduction band. Decreasing the temperature down to T=10 K, the Au/HBC Schottky barrier height increases to 1.55 eV and the Fermi level pinning at the HBC-GaAs interface reaches a value of 1.4 eV, close to the valence band of GaAs. These high values make HBC a promising interfacial layer in order to increase, for example, the open circuit voltage of GaAs Schottky barrier solar cells. (c) 2008 American Institute of Physics.