Published in
IOP Publishing, Semiconductor Science and Technology, 5(7), p. 681-685
DOI: 10.1088/0268-1242/7/5/011
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Optical properties of highly excited ZnSe/ZnSxSe1-xmultiple-quantum-well structures
Journal article published in 1992 by
M. Dabbicco,
M. Lepore,
R. Cingolani,
G. Scamarcio 
,
M. Ferrara,
I. Suemune
,
M. Ferrara,
I. Suemune
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Abstract
Optical properties of highly excited II-VI multiple quantum-well structures are investigated by means of photoluminescence, reflectivity and Raman scattering techniques. Experimental evidence of exciton-electron and exciton-exciton scattering processes in the range between I0 and 100 K is reported.