We developed an ambient pressure chemical vapor deposition (CVD) for rapid growth of high-quality graphene films on Cu foils. The quality and growth rate of graphene films are dramatically increased with decreasing H ₂ concentration. Without the presence of H ₂ , continuous graphene films are obtained with a mean sheet resistance of <350 Ω/ sq and light transmittance of 96.3% at 550 nm. Because of the ambient pressure, rapid growth rate, absence of H ₂ and readily available Cu foils, this CVD process enables inexpensive and high-throughput growth of high-quality graphene films.