American Institute of Physics, Applied Physics Letters, 11(94), p. 111901
DOI: 10.1063/1.3095499
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Semipolar GaN(112¯2) deposited on AlN(112¯2) by plasma-assisted molecular-beam epitaxy can follow the Frank–Van der Merwe or the Stranski–Krastanow growth mode as a function of the Ga/N ratio. N-rich grown GaN relaxes elastically at a critical thickness but the resulting GaN islands present multiple crystallographic orientations. In contrast, after deposition of a few two-dimensional GaN monolayers under Ga-rich conditions, a growth interruption in vacuum induces (112¯2)-oriented islanding. Applying this latter procedure, we have synthesized GaN/AlN quantum dot superlattices with reduced internal electric field.