We prepared a back contact for CdTe solar cells with Cu2S as primary contact. Cu2S was evaporated on CdCl2 treated CdTe solar cells in superstrate configuration. The CdTe and CdS layers were deposited by Closed Space Sublimation. Direct interface studies with X-ray photoelectron spectroscopy have revealed a strongly reactive interface between CdTe and Cu2S. A valance band offset of 0.4-0.6 eV has been determined. The performance of solar cells with Cu2S back contacts was studied in comparison to cells with an Au contact that which deposited onto a CdCl2-treated CdTe surface that was chemically etched using a nitric-phosphoric etch. The solar cells were analyzed by current–voltage curves and external quantum efficiency measurements. After several post deposition annealing steps, 13 % efficiency was reached with the Cu2S back contact, which was significantly higher than the ones obtained for the NP-etched back contacts.