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American Institute of Physics, Applied Physics Letters, 5(97), p. 052105

DOI: 10.1063/1.3469939

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Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

Journal article published in 2010 by Elvira Fortunato, Raquel Barros, Pedro Barquinha ORCID, Vitor Figueiredo, Sang-Hee Ko Park, Chi-Sun Hwang, Rodrigo Martins
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x < 2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal beta-Sn and alpha-SnOx phases, after annealing at 200 degrees C. These films exhibit a hole carrier concentration in the range of approximate to 10(16)-10(18) cm(-3); electrical resistivity between 10(1)-10(2) Omega cm; Hall mobility around 4.8 cm(2)/V s; optical band gap of 2.8 eV; and average transmittance approximate to 85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm(2)/V s and an ON/OFF modulation ratio of 10(3). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3469939]