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2008 International Semiconductor Conference

DOI: 10.1109/smicnd.2008.4703336

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Ultraviolet MSM photodetector based on GaN micromachining

Journal article published in 2008 by A. Mueller, A. Muller, G. Konstantinidis, M. Dragoman ORCID, D. Neculoiu, A. Dinescu, M. Androulidaki, M. Kayambaki, A. Stavrinidis, D. Vasilache, C. Buiculescu, I. Petrini, C. Anton, D. Dascalu, A. Kostopoulos and other authors.
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This paper is available in a repository.

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Abstract

This paper presents the manufacturing and the characterization of GaN membrane supported MSM photodetector structures obtained by means of nanolithographic techniques. Two different runs of MSM photodetectors, with different dimensions of the MSM structures and different GaN membrane thickness, have been performed and the detectors performances are annalised. Very low dark currents and unexpected high values, in the range of 50-100 A/W for the UV detectors responsivity have been obtained.