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ECS Meeting Abstracts, 17(MA2012-01), p. 777-777, 2012

DOI: 10.1149/ma2012-01/17/777

The Electrochemical Society, ECS Transactions, 4(45), p. 151-158, 2012

DOI: 10.1149/1.3700465

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VO2, a Metal-Insulator Transition Material for Nanoelectronic Applications

Journal article published in 2012 by Koen M. Martens, Shi Xiaoping, Iuliana P. Radu, Geert Rampelberg, Jeroen Verbruggen, Stefan Cosemans, Sofie Mertens, X. Shi, Marc Schaekers, Cedric Huyghebaert, S. De Gendt, Christophe Detavernier, Marc Heyns, Jorge A. Kittl ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

An overview is given of exploratory Metal-Insulator Transition material based nanoelectronics research at imec and UGent. The VO2 thin film growth techniques used are elaborated. This considers thermal oxidation of vanadium metal and Atomic Layer Deposition (ALD). Fundamental device properties such as voltage driven switching and tunnel junction properties are discussed. Device concepts making use of MIT materials or VO2 are elaborated.