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Wiley, Surface and Interface Analysis, 1(28), p. 271-274, 1999

DOI: 10.1002/(sici)1096-9918(199908)28:1<271::aid-sia592>3.0.co;2-1

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Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering

Journal article published in 1999 by Keran Zhang, Furong Zhu ORCID, Cha H. A. Huan, Ats T. S. Wee, T. Osipowicz
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This paper is available in a repository.

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Abstract

Indium-doped zinc oxide (ZnO:In) films were prepared by simultaneous r.f. and d.c. magnetron sputtering. The structural, optical and electrical properties of the films have been obtained by x-ray diffractometry (XRD), Rutherford backscattering spectrometry (RBS), spectrophotometry and atomic force microscopy (AFM) together with four-point probe measurements. The XRD pattern shows ZnO(002) to be the preferred film orientation. The deposited In/Zn atomic ratio is ∼0.4. Uniform ZnO:In films with a resistivity of ∼7 × 10−4 Ω.cm and a high transparency (>85%) were achieved, with further optimization possible. Copyright © 1999 John Wiley & Sons, Ltd.