Published in

IOP Publishing, Chinese Physics B, 3(18), p. 881-887, 2009

DOI: 10.1088/1674-1056/18/3/006

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GENERAL: The strain relaxation of InAs/GaAs self-organized quantum dot

Journal article published in 2009 by Yu-Min Liu, Yu Zhong-Yuan, Xiao-Min Ren
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

This paper presents a detailed analysis of the dependence of degree of strain relaxation of the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently shaped quantum dots arranged with different transverse periods are simulated in this analysis. It investigates the total residual strain energy that stored in the quantum dot and the substrate for all kinds of quantum dots with the same volume, as well as the dependence on both the aspect ratio and transverse period. The calculated results show that when the transverse period is larger than two times the base of the quantum dots, the influence of transverse periods can be ignored. The larger aspect ratio will lead more efficient strain relaxation. The larger angle between the faces and the substrate will lead more efficient strain relaxation. The obtained results can help to understand the shape transition mechanism during the epitaxial growth from the viewpoint of energy, because the strain relaxation is the main driving force of the quantum dot's self-organization.