American Institute of Physics, Journal of Applied Physics, 8(105), p. 086101
DOI: 10.1063/1.3086658
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We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 1012 atoms / cm 2 . The latter can be presumably further improved down to 107 atoms / cm 2 by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed.