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Elsevier, Applied Surface Science, 11(256), p. 3468-3471

DOI: 10.1016/j.apsusc.2009.12.055

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Low operating temperature of oxygen gas sensor based on undoped and Cr-doped ZnO films

Journal article published in 2010 by N. Al Hardan ORCID, M. J. Abdullah, A. Abdul Aziz, H. Ahmad
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Undoped and doped ZnO with 1 at.% (atomic percentage) chromium (Cr) was synthesized by RF reactive co-sputtering for oxygen gas sensing applications. The prepared films showed a highly c-oriented phase with a dominant (0 0 2) peak at a Bragg angle of around 34.2°. The operating temperature of the prepared ZnO sensor was around 350 °C and shifted to around 250 °C for the doped ZnO sensor which is lower than that of previously reported work. The sensitivity of the sensor toward oxygen gas was enhanced by doping ZnO with 1 at.% Cr. Good stability and repeatability of the sensor were demonstrated when tested under different concentration of oxygen atmosphere.