Elsevier, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (80-81), p. 1367-1370
DOI: 10.1016/0168-583x(93)90800-l
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In this work we present the radiation damage effects produced by argon ion implantation on thermally grown silicon dioxide and its evolution with annealing treatments. The etching rate measurements obtained with a buffered HF solution have been correlated with the structural network damage characterized by infrared spectroscopy. Two mechanisms that produce an increase of etching rate with dose have been found: the structural damage and the formation of nonstoichiometric layers.