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American Physical Society, Physical review B, 11(87)

DOI: 10.1103/physrevb.87.115212

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Uniaxial strain induced band splitting in semiconducting SrTiO3

Journal article published in 2013 by Young Jun Chang, Guru Khalsa ORCID, Luca Moreschini, Andrew L. Walter, Aaron Bostwick, Karsten Horn, A. H. MacDonald, Eli Rotenberg
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We use angle-resolved photoemission spectroscopy to study the influence of mechanically induced uniaxial strain on the electronic structure of the oxide semiconductor SrTiO 3 . We observe an orbital splitting between the Ti 3d yz and 3d xy bands, which are degenerate when unperturbed. Using the k·p method, we qualitatively explain the direction and the size of the observed energy splitting. Our comprehensive understanding of band splitting explains the strain induced mobility enhancement of electron-doped SrTiO3 3 in terms of band degeneracy breaking and reduced interband scattering. Our approach can be extended to differently strained oxide systems.