2008 26th International Conference on Microelectronics
DOI: 10.1109/icmel.2008.4559338
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The progressive leakage current growth in electrically stressed HfxSi1-xON/SiON gate stacks is analyzed within the framework of the physics of mesoscopic conducting systems. The breakdown spot is modeled as a nanoconstriction whose effective cross-section area increases as the degradation proceeds. We show that, after eliminating the gate tunneling current component, the post-breakdown conductance exhibits plateaus close to the quantum unit 2e2/h, where e is the electron charge and h the Planck's constant, as it is expected for atomic-sized contacts.