The possibility of designing core-shell nanoparticles that are ``invisible'' to the conduction electrons has been demonstrated recently. A total scattering cross section smaller than 0.01% of the physical cross section was demonstrated by artificially adjusting the parameters of the barrier and the well in a core-shell geometry. In this paper, we aim to extend the developed concept and find realistic material combinations that satisfy the cloaking criteria. We report designs of hollow nanoparticles that could be used to realize the cloaking concept in III\char21{}V semiconductor host matrices. Such particles could be used in advanced materials design to enhance and tune the electrical and the thermoelectric properties of a given host matrix. This paper may also contribute to defect engineering by coating defect sites with a proper cloaking layer.