Published in
American Institute of Physics, Applied Physics Letters, 22(104), p. 222401
DOI: 10.1063/1.4880728
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In situ manufacture of magnetic tunnel junctions by a direct-write process
Journal article published in 2014 by
Barry N. Costanzi,
Anastasia V. Riazanova,
E. Dan Dahlberg,
Lyubov M. Belova 
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Abstract
In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.