Pressure-dependent transport and photoluminescence (PL) measurements were performed on InN. In the transport measurements on the sample with a low electron concentration (n e lower than about 10 18 cm –3) a Localized Donor State (LDS) was seen to cross the Fermi level at elevated pressure magnitude. It was accompanied by the transfer of electrons from the Conduction Band to the LDS and a significant increase in electron mobility. In a sample with a higher concentration of electrons no transport anomaly was ob-served. Application of pressure helps to confirm that the disputed photoluminescence mechanism in InN consists in band-to-band recombination. No evidence of the participation of this LDS in radiative recom-bination processes was found in the pressure-dependent PL measurements. On the contrary, the depend-ence of the PL intensity on excitation power suggested the involvement of the LDS in nonradiative recombination processes.