The combination of bandstructure theory in the local density approximation with dynamical mean-field theory was recently successfully applied to V2O3—a material which undergoes the famous Mott–Hubbard metal–insulator transition upon Cr doping. The aim of this short paper is to emphasize two aspects of our recent results: (i) the filling of the Mott–Hubbard gap with increasing temperature, and (ii) the peculiarities of the Mott–Hubbard transition in this system which is not characterized by a divergence of the effective mass for the a1g-orbital.