Published in

Cambridge University Press (CUP), MRS Internet Journal of Nitride Semiconductor Research, S1(5), p. 887-893, 2000

DOI: 10.1557/s1092578300005226

Materials Research Society, Materials Research Society Symposium Proceedings, (595), 1999

DOI: 10.1557/proc-595-f99w11.75

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The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride.

Journal article published in 1999 by P. Ruterana, M. A. di Forte Poisson, G. Nouet, T.-H. Kehagias ORCID, P.-H. Komninou ORCID, T.-H. Karakostas, M. A. Di Forte Poisson, F. Huet
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Abstract

AbstractWhen the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the [111] axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.