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IOP Publishing, Nanotechnology, 1(27), p. 015703

DOI: 10.1088/0957-4484/27/1/015703

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Unique nano-domain structures in self-assembled BiFeO3and Pb(Zr,Ti)O3ferroelectric nanocapacitors

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

In this work, self-assembled ferroelectric BiFeO3 (BFO) and Pb(Zr,Ti)O3 (PZT) nanocapacitors were fabricated by a one-step pulsed-laser deposition process. Each individual nanocapacitor consists of a SrRuO3 or LaSrMnO3 bottom electrode layer, an epitaxial ferroelectric middle layer and a self-assembled nanoisland of conductive Bi2O3 or PbO2 as the top nanoelectrode. The nanoelectrodes have a lateral size of 10-100 nm depending on various deposition equivalent thickness. The as-fabricated nanocapacitors exhibit unique so-called anti-domain structures, with opposite polarization orientation to that of the naked ferroelectric films, which can be understood by the different interface built-in-voltages between their neighboring layers. They also show apparent reduced coercive fields and enhanced piezoelectricity compared to the naked films, as revealed by the switching spectroscopy piezoresponse force microscopy (SSPFM) and band-excitation mapping. Besides that, individual addressable polarization writing and erasing properties were also observed in these nanocapacitors and the written domain can maintain stability up to 12 h, which is promising for data storage devices.