InGaN doping for high carrier concentration in plasma-assisted molecular beam epitaxy: InGaN doping for high carrier concentration in plasma-assisted molecular beam epitaxy

Wiley, physica status solidi (c), 3-4(11), p. 381-384, 2014

Journal article published in 2014 by Iulian Gherasoiu, Kin Man Yu

, Lothar A. Reichertz, Wladek Walukiewicz

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