Published in
IOP Publishing, IOP Conference Series: Materials Science and Engineering, (6), p. 012002, 2009
DOI: 10.1088/1757-899x/6/1/012002
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Epitaxial growth of coaxial GaInN-GaN hetero-nanotubes
Journal article published in 2009 by
F. Scholz,
S. B. Thapa,
M. Fikry,
J. Hertkorn,
T. Wunderer,
F. Lipski,
A. Reiser,
Y. Xie,
M. Feneberg 
,
K. Thonke,
R. Sauer,
L. D. Yao,
M. Dürrschnabel,
D. Gerthsen
,
K. Thonke,
R. Sauer,
L. D. Yao,
M. Dürrschnabel,
D. Gerthsen
This paper is made freely available by the publisher.
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Abstract
We report about the successful realization of a coaxial hetero structure grown by MOVPE around ZnO nanocolumns. At higher overgrowth temperatures, the ZnO cores completely dissolved leaving GaN nanotube structures with excellent properties. Such tubes could be sheathed by a GaInN-GaN single quantum well structure, as confirmed by photoluminescence and transmission electron microscopy.