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Institute of Electrical and Electronics Engineers, IEEE Transactions on Nanotechnology, 2(9), p. 131-133, 2010

DOI: 10.1109/tnano.2010.2041670

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Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

This paper is available in a repository.
This paper is available in a repository.

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Abstract

A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.