Published in
Springer Verlag, Journal of the Korean Physical Society, 12(62), p. 2024-2027
DOI: 10.3938/jkps.62.2024
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Effect of pressure on the intermediate-valence semiconductor SmB6: 11B-NMR
Journal article published in 2013 by
Kohei Nishiyama,
Takeshi Mito,
Ko-Ichi Ueda,
Takehide Koyama,
Takao Kohara,
Gabriel Pristáš,
Slavomír Gabáni,
Marián Reiffers 
,
Karol Flachbart,
Yasuhiro Komaki,
Mitsutane Kokubu,
Hideto Fukazawa,
Yoh Kohori,
Nao Takeshita,
Natalia Shitsevalova
,
Karol Flachbart,
Yasuhiro Komaki,
Mitsutane Kokubu,
Hideto Fukazawa,
Yoh Kohori,
Nao Takeshita,
Natalia Shitsevalova
This paper is available in a repository.
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