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IOP Publishing, Japanese Journal of Applied Physics, No. 3(45), p. L102-L104, 2006

DOI: 10.1143/jjap.45.l102

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InP Etching by HI/Xe Inductively Coupled Plasma for Photonic-Crystal Device Fabrication

Journal article published in 2006 by Toshihide Ide, Jun-Ichi Hashimoto, Kengo Nozaki, Eiichi Mizuta, Toshihiko Baba
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We investigated the inductively coupled plasma etching of InP-based materials for photonic-crystal (PC) device fabrication. By optimizing bias power and gas pressure, circular holes with a diameter of