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IOP Publishing, Nanotechnology, 4(12), p. 447-449

DOI: 10.1088/0957-4484/12/4/312

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Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures

Journal article published in 2001 by V. Yu Panevin, V. A. Shalygin ORCID, Shalygin Va, L. E. Vorobjev, Glukhovskoy Av, A. V. Glukhovskoy, S. N. Danilov, V. Yu Panevin, Firsov Da, D. A. Firsov, B. V. Volovik, N. N. Ledentsov, Livshits Da, D. A. Livshits, V. M. Ustinov and other authors.
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Results of a photoluminescence and electroluminescence study of vertically coupled In0.5Ga0.5As/GaAs quantum dot (QD) structures with an extended waveguide (1.24 mum thick) are presented. Spectra of spontaneous and stimulated near-infrared (lambda similar or equal to 1 mum) emission as well as spectra of spontaneous mid-infrared (MIR) (lambda similar or equal to 12 mum) emission are obtained under optical and electrical pumping. It is shown that the observed MIR emission is connected with intraband electron optical transitions in the QD structures.