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2008 IEEE Silicon Nanoelectronics Workshop

DOI: 10.1109/snw.2008.5418407

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Investigation of resistive probes with high sensitivity

Journal article published in 2008 by Sang Wan Kim, Jae Young Song, Jong Pil Kim, Woo Young Choi, Han Ki Chung, Jae Hyun Park, Hyungsoo Ko, Hongsik Park, Chulmin Park, Seungbum Hong ORCID, Sung-Hoon Choa, Jong Duk Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park and other authors.
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO¿). Enhancement probe and I-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.