We present new characterization results for a large format, 15 µm pixel pitch, 2k×4k format, p-channel CCD fabricated on high-resistivity silicon at Lawrence Berkeley National Laboratory. The fully-depleted device is 300 µm thick and backside illuminated utilizing 4-side buttable packaging. We report on measurements of standard operating characteristics including charge transfer efficiency, readout noise, cosmetics performance, dark current, and well depth. We have also made preliminary measurements of the device's X-Ray energy resolution and tests of device linearity.