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Wiley, physica status solidi (a) – applications and materials science, 5(206), p. 803-807, 2009

DOI: 10.1002/pssa.200881403

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Evidence of type-II band alignment at the ordered GaInNP to GaAs heterointerface

Journal article published in 2009 by H. P. Hsu ORCID, Y. N. Huang, Y. S. Huang, P. Sitarek, K. K. Tiong, C. W. Tu, C. W. Hsu H. P.; Huang Y. N.; Huang Y. S.; Sitarek P.; Tiong K. K.; Tu
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Abstract

Polarized piezoreflectance (PzR) and photoreflectance (PR) are employed to study band alignment in Ga0.46In0.54NyP 1-y;/GaAs heterostructures grown by gas-source molecular-beam epi-taxy. The features near the band edge of Ga0.46In 0.54NyP1-y show strong polarization dependence, indicating the existence of some degree of ordering of these samples. The PR spectra exhibit Franz-Keldysh Oscillations (FKOs) above the band edge of GaAs. The electric fields in the GaAs region are eva-luated by analyzing the FKOs and found to decrease with in-creasing nitrogen content. The type-II band alignment at the Ga0.46In0.54NyP1-y/GaAs interface is concluded for the alloys with nitrogen content y larger than 0.5% based on the ap-pearance of additional features below band edge of GaAs. These features are attributed to the spatially indirect type-II transitions in the vicinity of interface region between Ga0.46In0.54N yP1-y, and GaAs. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA.