Rf sputtering in an Ar discharge of a SiC target has been used to deposit β-SiC films on Si-(111) substrates. XRD and infrared absorption spectra measurements were used to characterize the films. The results show that the deposited films are (111)-oriented β-SiC films, and a C rich buffer layer is formed between the substrate and SiC films when the substrate temperature is higher than 800°C in H2 atmosphere, which indicates that the crystalline quality is determined mainly by substrate temperature during the films growth, and the annealing process can improve the quality of Si/SiC interface. Higher substrate temperature leads to higher quality of crystalline structure but lower quality of SiC/Si interfaces. Combined with an annealing process we obtained SiC films with very good quality of both crystalline and SiC/Si interface.