Single -and multi-quantum well (QW) structures of Ga(AsBi)/GaAs with up to 10% Bi were grown by molecular beam epitaxy (MBE) at 300-330 degrees C substrate temperature. The photoluminesce measurements of QW structures demonstrated room temperature emission up to wavelengths of similar to 1.43 mu m. In the structures obtained using a combined growth approach - an active layer with three QWs with similar to 6% Bi was grown by MBE, whereas (AlGa) As claddings were grown by the metal organic vapour phase epitaxy technique - room temperature lasing at 1060 nm was documented.